Origin of the π-band replicas in the electronic structure of graphene grown on 4H-SiC(0001)Alternatively, see Google Scholar.
Origin of the π-band replicas in the electronic structure of graphene grown on 4H-SiC(0001)
C.M. Polley, L. I. Johansson, H. Fedderwitz, T. Balasubramanian, M. Leandersson, J. Adell, R. Yakimova, C. Jacobi
Phys. Rev. B 99 115404 (2019) (pdf)
Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
C.M. Polley, R. Buczko, A. Forsman, P. Dziawa, A. Szczerbakow, R. Rechciński, B.J. Kowalski, T. Story, M. Trzyna, M. Bianchi, A. Grubišić Čabo, P. Hofmann, O. Tjernberg, T. Balasubramanian
ACS Nano 12 (1) 617 (2018) (pdf)(supplementary)
Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films
J.A. Logan, S.J. Patel, S.D. Harrington, C. M. Polley, B.D. Schultz, T. Balasubramanian, A. Janotti, A. Mikkelsen, C.J. Palmstrøm
Nature Communications 7 11993 (2016) (open access)
Spin-valley locking in the normal state of a transition-metal dichalcogenide superconductor
L. Bawden, S.P. Cooil, F. Mazzola, J.M. Riley, L.J. Collins-McIntyre, V. Sunko, K.W.B. Hunvik, M. Leandersson, C. M. Polley, T. Balasubramanian, T.K. Kim, M. Hoesch, J.W. Wells, G. Balakrishnan, M.S. Bahramy, P.D.C. King
Nature Communications 7 11711 (2016) (open access)
Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator
C. M. Polley, T.-Y. Su V. Jovic, M. Saghir, D. Newby Jr., B. J. Kowalski, R. Jakiela, A. Barcz, M. Guziewicz, T. Balasubramanian, G. Balakrishnan, J. Laverock, K. E. Smith
Phys. Rev. B 92 075132 (2016) (pdf) (supplementary)
Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene
M.J. Webb, C. Polley, K. Dirscherl, G. Burwell, P. Palmgren, Y. Niu, A. Lundstedt, A.A. Zakharov, O.J. Guy, T. Balasubramanian, R. Yakimova, H. Grennber
Appl. Phys. Lett. 105 081602 (2014) (link)
Disentangling phonon and impurity interactions in δ-doped Si (001)
F. Mazzola, C.M. Polley, J.A. Miwa, M.Y. Simmons, J.W. Wells
Appl. Phys. Lett. 104 173108 (2014) (link)
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
S.R. McKibbin, C.M. Polley, G. Scappucci, J.G. Keizer, M.Y. Simmons
Appl. Phys. Lett. 104 123502 (2014) (link)
Observation of topological crystalline insulator surface states on (111)-oriented Pb1−xSnxSe films
C.M. Polley, P- Dziawa, A. Reszka, A. Szczerbakow, R. Minikayev, J.Z. Domagala, S. Safaei, P. Kacman, R. Buczko, J. Adell, M.H. Berntsen, B. M. Wojek, O. Tjernberg, B.J. Kowalski, T. Story, T. Balasubramanian
Phys. Rev. B 89 075317 (2014) (pdf)
Exploring the limits of n-type ultra-shallow junction formation
C. M. Polley, W.R. Clarke, J.A. Miwa, G. Scappucci, J.W. Wells, D.L. Jaeger, M.R. Bischof, R.F. Reidy, B.P. Gorman, M. Simmons
ACS Nano 7 (6) 5499 (2013) (pdf) (supplementary)
Four Probe, In Situ Electrical Characterization of Dopant Structures in Silicon
PhD thesis
UNSW (2012) (pdf)
Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon
C.M. Polley, W.R. Clarke, J.A. Miwa, M.Y. Simmons, J.W. Wells
Appl. Phys. Lett. 101 262105 (2012) (pdf)
Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements
C.M. Polley, W.R. Clarke, M.Y. Simmons
Nanoscale Research Letters 6 1 (1) (2011) (pdf)
Laser spectroscopy of CaF 2: Eu: Sm thin films grown by pulsed laser deposition
R.J. Reeves, C. Polley, J.S. Choi
J. Luminescence 129 (12) 1673 (2009)