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Origin of the π-band replicas in the electronic structure of graphene grown on 4H-SiC(0001)

C.M. Polley, L. I. Johansson, H. Fedderwitz, T. Balasubramanian, M. Leandersson, J. Adell, R. Yakimova, C. Jacobi

Phys. Rev. B 99 115404 (2019) (pdf)

Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures

C.M. Polley, R. Buczko, A. Forsman, P. Dziawa, A. Szczerbakow, R. Rechciński, B.J. Kowalski, T. Story, M. Trzyna, M. Bianchi, A. Grubišić Čabo, P. Hofmann, O. Tjernberg, T. Balasubramanian

ACS Nano 12 (1) 617 (2018) (pdf)(supplementary)

Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

J.A. Logan, S.J. Patel, S.D. Harrington, C. M. Polley, B.D. Schultz, T. Balasubramanian, A. Janotti, A. Mikkelsen, C.J. Palmstrøm

Nature Communications 7 11993 (2016) (open access)

Spin-valley locking in the normal state of a transition-metal dichalcogenide superconductor

L. Bawden, S.P. Cooil, F. Mazzola, J.M. Riley, L.J. Collins-McIntyre, V. Sunko, K.W.B. Hunvik, M. Leandersson, C. M. Polley, T. Balasubramanian, T.K. Kim, M. Hoesch, J.W. Wells, G. Balakrishnan, M.S. Bahramy, P.D.C. King

Nature Communications 7 11711 (2016) (open access)

Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator

C. M. Polley, T.-Y. Su V. Jovic, M. Saghir, D. Newby Jr., B. J. Kowalski, R. Jakiela, A. Barcz, M. Guziewicz, T. Balasubramanian, G. Balakrishnan, J. Laverock, K. E. Smith

Phys. Rev. B 92 075132 (2016) (pdf) (supplementary)

Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

M.J. Webb, C. Polley, K. Dirscherl, G. Burwell, P. Palmgren, Y. Niu, A. Lundstedt, A.A. Zakharov, O.J. Guy, T. Balasubramanian, R. Yakimova, H. Grennber

Appl. Phys. Lett. 105 081602 (2014) (link)

Disentangling phonon and impurity interactions in δ-doped Si (001)

F. Mazzola, C.M. Polley, J.A. Miwa, M.Y. Simmons, J.W. Wells

Appl. Phys. Lett. 104 173108 (2014) (link)

Low resistivity, super-saturation phosphorus-in-silicon monolayer doping

S.R. McKibbin, C.M. Polley, G. Scappucci, J.G. Keizer, M.Y. Simmons

Appl. Phys. Lett. 104 123502 (2014) (link)

Observation of topological crystalline insulator surface states on (111)-oriented Pb1−xSnxSe films

C.M. Polley, P- Dziawa, A. Reszka, A. Szczerbakow, R. Minikayev, J.Z. Domagala, S. Safaei, P. Kacman, R. Buczko, J. Adell, M.H. Berntsen, B. M. Wojek, O. Tjernberg, B.J. Kowalski, T. Story, T. Balasubramanian

Phys. Rev. B 89 075317 (2014) (pdf)

Exploring the limits of n-type ultra-shallow junction formation

C. M. Polley, W.R. Clarke, J.A. Miwa, G. Scappucci, J.W. Wells, D.L. Jaeger, M.R. Bischof, R.F. Reidy, B.P. Gorman, M. Simmons

ACS Nano 7 (6) 5499 (2013) (pdf) (supplementary)

Four Probe, In Situ Electrical Characterization of Dopant Structures in Silicon

PhD thesis

UNSW (2012) (pdf)

Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

C.M. Polley, W.R. Clarke, J.A. Miwa, M.Y. Simmons, J.W. Wells

Appl. Phys. Lett. 101 262105 (2012) (pdf)

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

C.M. Polley, W.R. Clarke, M.Y. Simmons

Nanoscale Research Letters 6 1 (1) (2011) (pdf)

Laser spectroscopy of CaF 2: Eu: Sm thin films grown by pulsed laser deposition

R.J. Reeves, C. Polley, J.S. Choi

J. Luminescence 129 (12) 1673 (2009)

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